Design Rules CMOS VLSI Design Slide 3 Layout Overview Minimum dimensions of mask features determine: – transistor size and die size – hence speed, cost, and power “Historical” Feature size f = gate length (in nm) – Set by minimum width of polysilicon – Other minimum feature sizes tend to be 30 to 50% bigger. Design or Layout Rules ...

The width of the polysilicon line over the active area (which is the gate of the transistor) is typically taken as the minimum poly width. Then, the overall length of the active area is simply determined by the following sum: (minimum

Lay out n- and p-transistors with packing of n-devices toward Vss and packing of p-devices toward VDD (see layout styles in Chapter5). Avoid “convoluted” structures that interwire n- and p-devices in checkerboard styles (unless you are designing in SOI which is latchup free).

§Transistor dimensions specified as Width / Length –Minimum size 4l/ 2l, sometimes called 1 unit or standard pitch –In f= 0.6 µm process, this is 1.2 µm wide, 0.6 µm long

Oct 13, 2013 · Design, layout, and simulations of CMOS NAND, NOR, XOR gates and a full-adder. Authored by Adam James Wolverton. Email: [email protected]. Today's Date: 10/13/2013. Lab description: 1) Go through the video tutorial 4 and learn how to design schematic/layout for NAND and NOR gates.

CMOS Gate Design • Designing a CMOS gate: – Find pulldown NMOS network from logic function or by inspection – Find pullup PMOS network • By inspection • Using logic function • Using dual network approach – Size transistors using equivalent inverter • Find worst-case pullup and pulldown paths

CMOS Gates: Sizing and Delay • Load Capacitance • Fall and rise time analysis. • Analytical models. • Propagation delay analysis. • Fall and rise time formulas • Transistor sizing • Multi-input gates Text: Sections 3.3.3 and 4.2

transistor size (and hence speed, cost, and power) • Feature size f = distance between source and drain – Set by minimum width of polysilicon • Feature size improves 30% every 3 years or so • Normalize for feature size when describing design rules • Express rules in terms of λ= f/2 – E.g. λ= 0.3 μm in 0.6 μm process 26 CMOS ...

capacitance numbers to size transistors from either crude layout, or layout estimates. Since most of the wires are minimum width, we will use an effective capacitance per running micron of length, assuming an average number of wire crossings. This number will include both the area (plate) and perimeter (fringe) capacitance terms.

Dec 20, 2015 · Let's talk about the difference between gate length, channel length and the diffusion length. While fabricating a MOS device, typically the poly gate is grown first using the minimum feature size mask which is characteristic of a particular technology node.