Samsung has introduced its upcoming 10th-generation V-NAND flash memory with over 400 active layers and a 5.6 GT/s interface speed at the International Solid-State Circuit Conference 2025.

Samsung says the 9100 Pro (built on its V Nand TLC V8 with a custom controller) can reach sequential read and write speeds of up to 14.8GBps and 13.4GBps, respectively. That’s roughly double the ...

Built on an improved version of Samsung's TLC V8 V-NAND flash, this is the South Korean company's first "true" Gen 5 SSD, delivering blazingly fast speeds and more storage capacity than its ...