NXP’s first top-side cooled RF power module series is designed for 32T32R, 200 W radios covering 3.3 GHz to 3.8 GHz. The devices combine the company’s in-house LDMOS and GaN semiconductor ...

Guerrilla RF, Inc. (OTCQX: GUER) announces that its high-efficiency GRF5509 4-watt power amplifier was selected by Impinj (NASDAQ: PI) for use in their enterprise-grade RAIN RFID reader module ...

OnMicro’s HS8443-61 is a multi-mode, multi-band power amplifier module covering the 663MHz to 915MHz, 1710MHz to 2025MHz, and 2300MHz to 2690MHz frequency bands.

Fibocom (Stock code:300638), a global leading provider of AIoT solutions and wireless communication modules, has unveiled its new MQ780-GL Cat.M module embedded with the Qualcomm® E51 4G Modem-RF ...

Off-the-shelf RF power modules such as the A5M35TG140-TC are available for 32T32R-class, 200-W 5G radios covering 3.3 GHz to 3.8 GHz. The devices combine LDMOS and GaN semiconductor technologies to ...

Coming up: Management is committed to 1) turning around the rechargeable battery business in fiscal 2025, 2) recovering the RF module business in fiscal 2026, and 3) expanding sales of power ...

IGNP1011L2400 is a high power GaN-on-SiC RF power amplifier module/pallet that has been designed specifically for IFF/SSR systems operating under either Mode S ELM (48x {32μs on, 18μs off}, 6.4% Long ...

An extended cascade analysis at design-time provides the optimum front-end configuration for each RF input power level to the configuration mapper (Figure 2). The configuration mapper controls the ...

NXP’s first top-side cooled RF power module series is designed for 32T32R, 200 W radios covering 3.3 GHz to 3.8 GHz and combines the company’s in-house LDMOS and GaN semiconductor technologies to ...