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A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. Abstract “A GaN gate injection transistor (GIT) has great ...
The test voltage is raised to 13.3 V dc again, and VR1 is adjusted so that the transistor turns on. With the upper and lower levels set, the NC point is connected to the circuit (15-V dc charging ...
Find the technical paper here. Published August 2023. S. Kim et al., “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET),” in IEEE Access, vol. 11, pp.
When we first spotted the article about a one-transistor amateur radio transceiver, we were sure it was a misprint. We’ve seen a lot of simple low-power receivers using a single transistor, a… ...
High-performance top-gated carbon nanotube field-effect transistors (CNT FETs) with a gate length of 5 nanometers can be fabricated that perform better than silicon complementary metal-oxide ...
Oct 22, 2024 Single-transistor neuron redefines efficiency in neuromorphic computing (Nanowerk Spotlight) Computing systems have made impressive progress, but they still fall short when compared to ...
So, Peng’s team decided not to shrink the old design any further. They scrapped it altogether. Their new transistor uses a gate-all-around field-effect transistor (GAAFET) structure.
The transistors in the “20 A ” architecture, which the troubled company has just abandoned so as to double down on the 18 A, have gate lengths of around 14nm—140 angstroms, or 140 Å.
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