NXP's Gen8 LDMOS RF power transistors offer more bandwidth, more power, better electrical efficiency in a smaller form factor and at a lower cost. Compared to the previous generation, Gen8 increases ...
Expanding its portfolio of industry-leading RF power transistors, NXP Semiconductors, the independent semiconductor company founded by Philips, today launched its latest Laterally Diffused Metal Oxide ...
New-generation Airfast RF Multi-Chip Modules (MCMs) extend frequency coverage to 4.0 GHz, leveraging the performance of NXP’s latest LDMOS technology and integration design techniques Higher output ...
NXP has a beefy new LDMOS power transistor for VHF transmission. The new BLF188XR is an “eXtremely Rugged” (NXP’s description) device, capable of withstanding a severe load mismatch of 65:1 at 5 dB of ...
NXP Semiconductors, the independent semiconductor company founded by Philips, today launched the BLC7G22L(S)-130 base station power transistor – the first of its products to feature NXP's ...
NXP is expanding its cellular infrastructure portfolio of GaN and silicon laterally diffused metal oxide semiconductor (Si-LDMOS) for 5G networks. NXP is expanding its cellular infrastructure ...
Last week, NXP Semiconductors announced the availability of a new LDMOS UHF RF power transistor, the BLF888A, for use in broadcast transmitters and industrial applications. The unit is rated at 600 ...
Philadelphia, PA. NXP Semiconductors N.V. said at IMS that it is driving innovation with its expanded cellular infrastructure portfolio of GaN and silicon laterally-diffused metal-oxide semiconductor ...
Turkey’s OnAir Medya has launched a new line of FM transmitters, the FT series. The modular FT line scales the power output from 750 W up to 20 kW. According to OnAir Medya, the heart of the ...
Download this article in PDF format. Wireless technology is a large part of modern communications, requiring more bandwidth for growing numbers of users and functions. Much of the promise of 5G ...
NXP Semiconductors has announced a family of top-side cooled radio frequency (RF) amplifier modules, based on a packaging design intended to enable thinner and lighter radios for 5G infrastructure.