Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...
Even with its new fabs coming online, demand will exceed supply Memory-maker Micron Technology has predicted that RAM ...
A team of researchers has proposed a new concept for magnet-based memory devices, which might revolutionize information storage devices owing to their potential for large-scale integration, ...
Figure 1. Illustrations of the ultra-low power phase change memory device developed through this study and the comparison of power consumption by the newly developed phase change memory device ...
TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that the company’s research papers have been accepted for presentation at IEEE International Electron ...
Smartphones are getting more AI features, not fewer, but rising memory prices may force manufacturers to ship phones with ...
Neuromorphic computing aims to replicate the functional architecture of the human brain by integrating electronic components that mimic synaptic and neuronal behaviours. Central to this endeavour are ...
The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...
Forbes contributors publish independent expert analyses and insights. This is my third and last blog on digital storage and memory projections for 2024. The last two articles focused on digital ...
Forbes contributors publish independent expert analyses and insights. With the ever-evolving trade war and tariffs that likely include digital storage and memory products as well as other electronics ...
A new low-power, high-speed memory technology on the horizon could replace solid-state drives, hard drives and DRAM in PCs, and bring higher levels of storage capacity to mobile devices and wearables.