Their groundbreaking research focuses on gallium nitride (GaN) transistors, which are high-power, high-frequency semiconductor devices used in mobile data and satellite communication systems.

Because of on-going intellectual property protection, Longobardi could not discuss details of the company’s technology, but did reveal that it takes an integrated circuit approach, building extra GaN ...

GaN power transistors can shrink AC‑DC power supplies and cut losses but, to get the best out of them, their gate drive waveform needs careful attention.

As is typical with high-power drivers, these operate in a half-bridge configuration with identical N-channel GaN transistors (specifically part EPC2361) driven by dedicated gate drivers (that’s ...

GaN is widely recognized as a promising alternative because of its higher power density and breakdown voltage. While GaN transistors on silicon carbide (SiC) have shown strong RF performance in ...