DUBLIN--(BUSINESS WIRE)--The "Gallium Arsenide (GaAs) Next Generation Semiconductors, Market Shares, Market Forecasts, Market Analysis, 2020-2026" report from Wintergreen Research, Inc has been added ...

Researchers have now grown a 2DEG system on gallium arsenide, a semiconductor that's efficient in absorbing and emitting light. This development is promising for new electronic devices that interact ...

An alloy of gallium and arsenic compound (GaAs) that is used as the base material for chips. Several times faster than silicon, it is used in high frequency applications such as cellphones, DVD ...

The Netherlands Organization for Applied Scientific Research (TNO) is working with solar manufacturer MCPV and aviation giant Airbus to adapt terrestrial-proven silicon technology for space operations ...

Researchers at Stanford University have come up with a new way to make chips and solar panels using gallium arsenide, a semiconductor that beats silicon in several important areas but is typically too ...

Norwegian scientists have developed a gallium arsenide (GaAs) nanowire solar cell that can be used as a top cell in a dual tandem cell with a bottom silicon cell. The device is claimed to be the most ...

Japan Atomic Energy Agency (JAEA) scientists have developed a novel technique to determine atomic arrangements and atomic species on semiconductor surfaces during growth using x-rays from SPring-8, a ...

(Nanowerk News) A team at the Helmholtz Zentrum Berlin (HZB) has succeeded in growing nanocrystals of gallium arsenide on tiny columns of silicon and germanium. This enables extremely efficient ...

Gallium Arsenide: Key To Faster, Better Computing Since the early 1970s, scientists have been promoting gallium arsenide as a faster, more efficient substrate material than silicon for making ...

GALLIUM arsenide is a semiconductor of great interest from the purely scientific point of view and as a device material. It is therefore desirable to be able to prepare single crystals of high purity.

As great as silicon is for semiconductor applications, it has one weakness in that using it for lasers isn’t very practical. Never say never though, as it turns out that you can now grow lasers ...

PV research institute Fraunhofer ISE has reported a new efficiency record of 22.3% for a multi-junction solar cell made of silicon and III-V semiconductor materials using a direct epitaxy process ...