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Intel fabricated 2D gate-all-around NMOS and PMOS transistors with a gate length of 30nm using moly-based material.
In this case, "2D" refers to the fact that the transistor is built entirely out of atomic monolayers. As you can see in the diagram above, this results in a FET that is just six atoms thick.
W. Mortelmans et al., “Record Performance in GAA 2D NMOS and PMOS Using Monolayer MoS2 and WSe2 with Scaled Contact and Gate Length,” 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI ...
As transistors are scaled to smaller dimensions, their static power increases. Combining two-dimensional (2D) channel materials with complementary metal–oxide–semiconductor (CMOS) logic architectures ...